CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 5MA, 10V / 120 @ 1MA, 6V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN PRE-BIASED, 1 PNP 50V, 60V 100MA 140MHZ 500MW SURFACE MOUNT SOT-563

FREQUENCY - TRANSITION:  140MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  EMF18XV6T5G

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  500MW

RESISTOR - BASE (R1):  47 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

STANDARD PACKAGE:  8,000

SUPPLIER DEVICE PACKAGE:  SOT-563

TRANSISTOR TYPE:  1 NPN PRE-BIASED, 1 PNP

VCE SATURATION (MAX) @ IB, IC:  250MV @ 300ΜA, 10MA / 500MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V, 60V