CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  44A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 650V 44A (TC) 312W (TC) SURFACE MOUNT D²PAK (TO-263AB)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  78NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3090PF @ 400V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FCB070N65S3

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  312W (TC)

RDS ON (MAX) @ ID, VGS:  70 MOHM @ 22A, 10V

SERIES:  SUPERFET® III

SUPPLIER DEVICE PACKAGE:  D²PAK (TO-263AB)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4.5V @ 4.4MA