BASE PART NUMBER:  FCB20N60

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  20A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 600V 20A (TC) 341W (TC) SURFACE MOUNT TO-263AB

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  102NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  3080PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FCB20N60-F085

MANUFACTURER STANDARD LEAD TIME:  15 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  341W (TC)

RDS ON (MAX) @ ID, VGS:  198 MOHM @ 20A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101, SUPERFET?

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  TO-263AB

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA