CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  12A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 650V 12A (TC) 90W (TC) SURFACE MOUNT TO-252, (D-PAK)

DRAIN TO SOURCE VOLTAGE (VDSS):  650V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  24NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1010PF @ 400V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FCD260N65S3

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

POWER DISSIPATION (MAX):  90W (TC)

RDS ON (MAX) @ ID, VGS:  260 MOHM @ 6A, 10V

SERIES:  SUPERFET® III

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  TO-252, (D-PAK)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4.5V @ 1.2MA