CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 800V 8A (TC) 136W (TC) THROUGH HOLE TO-220

DRAIN TO SOURCE VOLTAGE (VDSS):  800V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

ENVIRONMENTAL INFORMATION:  FCP850N80Z MATERIAL DECLARATIONFCP850N80Z CERT OF COMPLIANCE

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  29NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1315PF @ 100V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FCP850N80Z

MANUFACTURER STANDARD LEAD TIME:  52 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  136W (TC)

RDS ON (MAX) @ ID, VGS:  850 MOHM @ 3A, 10V

SERIES:  SUPERFET® II

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  TO-220

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4.5V @ 600ΜA