CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  59A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 300V 59A (TC) 500W (TC) THROUGH HOLE TO-3PN

DRAIN TO SOURCE VOLTAGE (VDSS):  300V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  100NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  4670PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDA59N30

MANUFACTURER STANDARD LEAD TIME:  8 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-3P-3, SC-65-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  500W (TC)

RDS ON (MAX) @ ID, VGS:  56 MOHM @ 29.5A, 10V

SERIES:  UNIFET?

STANDARD PACKAGE:  450

SUPPLIER DEVICE PACKAGE:  TO-3PN

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA