CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  110A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 80V 110A (TC) 333W (TC) SURFACE MOUNT D²PAK (TO-263AB)

DRAIN TO SOURCE VOLTAGE (VDSS):  80V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  253NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  14600PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDB86360-F085

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  333W (TC)

RDS ON (MAX) @ ID, VGS:  1.8 MOHM @ 80A, 10V

SERIES:  AUTOMOTIVE, AEC-Q101, POWERTRENCH®

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  D²PAK (TO-263AB)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4.5V @ 250ΜA