BRAND NAME:  ON SEMICONDUCTOR

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  80 V

DRAIN CURRENT-MAX (ABS) (ID):  2.1 A

DRAIN CURRENT-MAX (ID):  2.1 A

DRAIN-SOURCE ON RESISTANCE-MAX:  183 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  40 PF

JEDEC-95 CODE:  MO-193AA

JESD-30 CODE:  R-PDSO-G6

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  419AG

MANUFACTURER PART NUMBER:  FDC3535

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G6

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  1.6 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON