CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.3A, 2.8A

DETAILED DESCRIPTION:  MOSFET ARRAY N AND P-CHANNEL, COMMON DRAIN 80V 4.3A, 2.8A 1.3W SURFACE MOUNT TO-252-4L

DRAIN TO SOURCE VOLTAGE (VDSS):  80V

FET FEATURE:  LOGIC LEVEL GATE

FET TYPE:  N AND P-CHANNEL, COMMON DRAIN

GATE CHARGE (QG) (MAX) @ VGS:  18NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  800PF @ 40V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDD3510H

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-5, DPAK (4 LEADS + TAB), TO-252AD

PACKAGING:  REEL

POWER - MAX:  1.3W

RDS ON (MAX) @ ID, VGS:  80 MOHM @ 4.3A, 10V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  TO-252-4L

VGS(TH) (MAX) @ ID:  4V @ 250ΜA