ADDITIONAL FEATURE:  ESD PROTECTION

BRAND NAME:  ON SEMICONDUCTOR

CASE CONNECTION:  DRAIN

CONFIGURATION:  SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  20 V

DRAIN CURRENT-MAX (ABS) (ID):  3.7 A

DRAIN CURRENT-MAX (ID):  3.7 A

DRAIN-SOURCE ON RESISTANCE-MAX:  68 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  MO-229

JESD-30 CODE:  S-PDSO-N6

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  511DA

MANUFACTURER PART NUMBER:  FDMA1032CZ

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  6

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, S-PDSO-N6

PACKAGE SHAPE:  SQUARE

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL AND P-CHANNEL

POWER DISSIPATION-MAX (ABS):  1.4 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FORM:  NO LEAD

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON