CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8A (TA)

DETAILED DESCRIPTION:  P-CHANNEL 20V 8A (TA) 2.1W (TA) SURFACE MOUNT MICROFET 1.6X1.6 THIN

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  21NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2110PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDME910PZT

MANUFACTURER STANDARD LEAD TIME:  39 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  6-POWERUFDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.1W (TA)

RDS ON (MAX) @ ID, VGS:  24 MOHM @ 8A, 4.5V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  5,000

SUPPLIER DEVICE PACKAGE:  MICROFET 1.6X1.6 THIN

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1.5V @ 250ΜA