CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11.6A (TA), 35A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 120V 11.6A (TA), 35A (TC) 2.5W (TA), 104W (TC) SURFACE MOUNT 8-PQFN (5X6)

DRAIN TO SOURCE VOLTAGE (VDSS):  120V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  46NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2735PF @ 60V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDMS86201

MANUFACTURER STANDARD LEAD TIME:  34 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  8-POWERTDFN

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.5W (TA), 104W (TC)

RDS ON (MAX) @ ID, VGS:  11.5 MOHM @ 11.6A, 10V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  8-PQFN (5X6)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA