AVALANCHE ENERGY RATING (EAS):  384 MJ

BRAND NAME:  ON SEMICONDUCTOR

CASE CONNECTION:  DRAIN

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  150 V

DRAIN CURRENT-MAX (ABS) (ID):  22 A

DRAIN CURRENT-MAX (ID):  4.4 A

DRAIN-SOURCE ON RESISTANCE-MAX:  53 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

JEDEC-95 CODE:  MO-240AA

JESD-30 CODE:  R-PDSO-F5

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  483AE

MANUFACTURER PART NUMBER:  FDMS86263P

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  5

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-F5

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  P-CHANNEL

POWER DISSIPATION-MAX (ABS):  104 W

PULSED DRAIN CURRENT-MAX (IDM):  70 A

SUBCATEGORY:  OTHER TRANSISTORS

SURFACE MOUNT:  YES

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON