CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  800MA (TA)

DETAILED DESCRIPTION:  P-CHANNEL 150V 800MA (TA) 1.5W (TA) SURFACE MOUNT SUPERSOT-3

DRAIN TO SOURCE VOLTAGE (VDSS):  150V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  6V, 10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  4.1NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  210PF @ 75V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDN86265P

MANUFACTURER STANDARD LEAD TIME:  39 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.5W (TA)

RDS ON (MAX) @ ID, VGS:  1.2 OHM @ 800MA, 10V

SERIES:  POWERTRENCH®

SUPPLIER DEVICE PACKAGE:  SUPERSOT-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±25V

VGS(TH) (MAX) @ ID:  4V @ 250ΜA