FDP3651U

Factory Authorized Line

ON SEMICONDUCTOR

Electronic Component

FDP3651U

N-CHANNEL 100V 80A (TC) 255W (TC) THROUGH HOLE TO-220-3
Call for availability ON SEMICONDUCTOR
Mfr Part # FDP3651U
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-220-3PACKAGING:  TUBESTANDARD PACKAGE:  800SUPPLIER DEVICE PACKAGE:  TO-220-3
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  80A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 80A (TC) 255W (TC) THROUGH HOLE TO-220-3

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  69NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5522PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDP3651U

MANUFACTURER STANDARD LEAD TIME:  9 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  255W (TC)

RDS ON (MAX) @ ID, VGS:  18 MOHM @ 80A, 10V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  TO-220-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  5.5V @ 250ΜA