BRAND NAME:  ON SEMICONDUCTOR

CONFIGURATION:  SINGLE WITH BUILT-IN DIODE

DS BREAKDOWN VOLTAGE-MIN:  40 V

DRAIN CURRENT-MAX (ABS) (ID):  14.9 A

DRAIN CURRENT-MAX (ID):  14.9 A

DRAIN-SOURCE ON RESISTANCE-MAX:  7 MO

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

FEEDBACK CAP-MAX (CRSS):  330 PF

JESD-30 CODE:  R-PDSO-G8

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PACKAGE CODE:  751EB

MANUFACTURER PART NUMBER:  FDS8842NZ

NUMBER OF ELEMENTS:  1

NUMBER OF TERMINALS:  8

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  150 °C

PACKAGE BODY MATERIAL:  PLASTIC/EPOXY

PACKAGE DESCRIPTION:  SMALL OUTLINE, R-PDSO-G8

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  SMALL OUTLINE

PBFREE CODE:  YES

PEAK REFLOW TEMPERATURE (CEL):  NOT SPECIFIED

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  2.5 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FORM:  GULL WING

TERMINAL POSITION:  DUAL

TIME@PEAK REFLOW TEMPERATURE-MAX (S):  NOT SPECIFIED

TRANSISTOR APPLICATION:  SWITCHING

TRANSISTOR ELEMENT MATERIAL:  SILICON