CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  3.3A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 3.3A (TC) 2.2W (TA) SURFACE MOUNT SOT-223-4

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  6.8NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  315PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FDT86113LZ

MANUFACTURER STANDARD LEAD TIME:  25 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.2W (TA)

RDS ON (MAX) @ ID, VGS:  100 MOHM @ 3.3A, 10V

SERIES:  POWERTRENCH®

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-223-4

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA