CAPACITANCE @ VR, F:  538PF @ 1V, 100KHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  22.5A (DC)

CURRENT - REVERSE LEAKAGE @ VR:  200ΜA @ 1200V

DETAILED DESCRIPTION:  DIODE SILICON CARBIDE SCHOTTKY 1200V 22.5A (DC) SURFACE MOUNT TO-252, (D-PAK)

DIODE TYPE:  SILICON CARBIDE SCHOTTKY

LEAD FREE STATUS:  LEAD FREE

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FFSD08120A

MANUFACTURER STANDARD LEAD TIME:  42 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE - JUNCTION:  -55°C ~ 175°C

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

REVERSE RECOVERY TIME (TRR):  0NS

SPEED:  NO RECOVERY TIME > 500MA (IO)

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  TO-252, (D-PAK)

VOLTAGE - DC REVERSE (VR) (MAX):  1200V

VOLTAGE - FORWARD (VF) (MAX) @ IF:  1.75V @ 8A