CAPACITANCE @ VR, F:  887PF @ 1V, 100KHZ

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - AVERAGE RECTIFIED (IO):  23A (DC)

CURRENT - REVERSE LEAKAGE @ VR:  200ΜA @ 650V

DETAILED DESCRIPTION:  DIODE SILICON CARBIDE SCHOTTKY 650V 23A (DC) THROUGH HOLE TO-247-2

DIODE TYPE:  SILICON CARBIDE SCHOTTKY

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FFSH1665A

MANUFACTURER STANDARD LEAD TIME:  39 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE - JUNCTION:  -55°C ~ 150°C

PACKAGE / CASE:  TO-247-2

REVERSE RECOVERY TIME (TRR):  0NS

SPEED:  NO RECOVERY TIME > 500MA (IO)

SUPPLIER DEVICE PACKAGE:  TO-247-2

VOLTAGE - DC REVERSE (VR) (MAX):  650V