CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  52.4A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 60V 52.4A (TC) 3.75W (TA), 121W (TC) SURFACE MOUNT D²PAK (TO-263AB)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  32NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1630PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQB50N06LTM

MANUFACTURER STANDARD LEAD TIME:  11 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.75W (TA), 121W (TC)

RDS ON (MAX) @ ID, VGS:  21 MOHM @ 26.2A, 10V

SERIES:  QFET®

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  D²PAK (TO-263AB)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA