CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  16A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 250V 16A (TC) 142W (TC) THROUGH HOLE TO-220-3

DRAIN TO SOURCE VOLTAGE (VDSS):  250V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  35NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1200PF @ 25V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQP16N25

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  142W (TC)

RDS ON (MAX) @ ID, VGS:  230 MOHM @ 8A, 10V

SERIES:  QFET®

SUPPLIER DEVICE PACKAGE:  TO-220-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA