CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  9.4A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 250V 9.4A (TC) 120W (TC) THROUGH HOLE TO-220-3

DRAIN TO SOURCE VOLTAGE (VDSS):  250V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  38NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  1180PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  FQP9P25

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  120W (TC)

RDS ON (MAX) @ ID, VGS:  620 MOHM @ 4.7A, 10V

SERIES:  QFET®

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-220-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  5V @ 250ΜA