HGTP10N120BN

Factory Authorized Line

ON SEMICONDUCTOR

Electronic Component

HGTP10N120BN

IGBT NPT 1200V 35A 298W THROUGH HOLE TO-220AB
Call for availability ON SEMICONDUCTOR
Mfr Part # HGTP10N120BN
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-220-3PACKAGING:  TUBESTANDARD PACKAGE:  800SUPPLIER DEVICE PACKAGE:  TO-220AB
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  35A

CURRENT - COLLECTOR PULSED (ICM):  80A

DETAILED DESCRIPTION:  IGBT NPT 1200V 35A 298W THROUGH HOLE TO-220AB

GATE CHARGE:  100NC

IGBT TYPE:  NPT

INPUT TYPE:  STANDARD

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  HGTP10N120BN

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER - MAX:  298W

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  TO-220AB

SWITCHING ENERGY:  320ΜJ (ON), 800ΜJ (OFF)

TD (ON/OFF) @ 25°C:  23NS/165NS

TEST CONDITION:  960V, 10A, 10 OHM, 15V

VCE(ON) (MAX) @ VGE, IC:  2.7V @ 15V, 10A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  1200V