KSD2012GTU

Factory Authorized Line

ON SEMICONDUCTOR

Electronic Component

KSD2012GTU

BIPOLAR (BJT) TRANSISTOR NPN 60V 3A 3MHZ 25W THROUGH HOLE TO-220F
Call for availability ON SEMICONDUCTOR
Mfr Part # KSD2012GTU
Qty in Stock Call for availability
Factory Stock N/A
Minimum Order 1
Packaging PACKAGE / CASE:  TO-220-3 FULL PACKPACKAGING:  TUBESTANDARD PACKAGE:  1,000SUPPLIER DEVICE PACKAGE:  TO-220F
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Availability

  • Qty in StockCall for availability
  • Min. Order Qty1
Specification

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  3A

CURRENT - COLLECTOR CUTOFF (MAX):  100ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  150 @ 500MA, 5V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 60V 3A 3MHZ 25W THROUGH HOLE TO-220F

FREQUENCY - TRANSITION:  3MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  KSD2012GTU

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  150°C (TJ)

PACKAGE / CASE:  TO-220-3 FULL PACK

PACKAGING:  TUBE

POWER - MAX:  25W

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  TO-220F

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  1V @ 200MA, 2A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  60V