CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  750MA (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

EXPANDED DESCRIPTION:  N-CHANNEL 20V 750MA (TA) 400MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  125PF @ 5V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MGSF1N02LT1G

MANUFACTURER STANDARD LEAD TIME:  30 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  400MW (TA)

RDS ON (MAX) @ ID, VGS:  90 MOHM @ 1.2A, 10V

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.4V @ 250ΜA