CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  1.6A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 30V 1.6A (TA) 420MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)

DRAIN TO SOURCE VOLTAGE (VDSS):  30V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  140PF @ 5V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MGSF1N03LT1G

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  420MW (TA)

RDS ON (MAX) @ ID, VGS:  100 MOHM @ 1.2A, 10V

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.4V @ 250ΜA