CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  50A

CURRENT - COLLECTOR CUTOFF (MAX):  2MA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  1000 @ 25A, 5V

EXPANDED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 120V 50A 300W THROUGH HOLE TO-3

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJ11032G

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 200°C (TJ)

PACKAGE / CASE:  TO-204AE

PACKAGING:  TRAY

POWER - MAX:  300W

STANDARD PACKAGE:  100

SUPPLIER DEVICE PACKAGE:  TO-3

TRANSISTOR TYPE:  NPN - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  3.5V @ 500MA, 50A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  120V