CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  2A

CURRENT - COLLECTOR CUTOFF (MAX):  20ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  1000 @ 2A, 3V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 100V 2A 25MHZ 1.75W SURFACE MOUNT DPAK-3

FREQUENCY - TRANSITION:  25MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJD112RLG

MANUFACTURER STANDARD LEAD TIME:  2 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER - MAX:  1.75W

STANDARD PACKAGE:  1,800

SUPPLIER DEVICE PACKAGE:  DPAK-3

TRANSISTOR TYPE:  NPN - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  3V @ 40MA, 4A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  100V

ALTERNATE PARTS:  NJVMJD112T4G NJVMJD112G MJD112T4G MJD112G