BASE PART NUMBER:  MJD122

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  8A

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  1000 @ 4A, 4V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 100V 8A 4MHZ 1.75W SURFACE MOUNT DPAK

FREQUENCY - TRANSITION:  4MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJD122T4G

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER - MAX:  1.75W

SUPPLIER DEVICE PACKAGE:  DPAK

TRANSISTOR TYPE:  NPN - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  4V @ 80MA, 8A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  100V

ALTERNATE PARTS:  NJVMJD122T4G-VF01 MJD122G MJD122G