BASE PART NUMBER:  MJD31

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  3A

CURRENT - COLLECTOR CUTOFF (MAX):  50ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  10 @ 3A, 4V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 100V 3A 3MHZ 1.56W SURFACE MOUNT DPAK

FREQUENCY - TRANSITION:  3MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJD31CT4G

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER - MAX:  1.56W

SUPPLIER DEVICE PACKAGE:  DPAK

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  1.2V @ 375MA, 3A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  100V

ALTERNATE PARTS:  NJVMJD31CRLG MJD31CRLG MJD31CG MJD31CRLG MJD31CG