BASE PART NUMBER:  MJD45H11

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  8A

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  40 @ 4A, 1V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 80V 8A 90MHZ 1.75W THROUGH HOLE I-PAK

FREQUENCY - TRANSITION:  90MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJD45H11-1G

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  TUBE

POWER - MAX:  1.75W

SUPPLIER DEVICE PACKAGE:  I-PAK

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  1V @ 400MA, 8A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  80V