CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  1A

CURRENT - COLLECTOR CUTOFF (MAX):  100ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  30 @ 300MA, 10V

EXPANDED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 350V 1A 10MHZ 1.56W SURFACE MOUNT DPAK-3

FREQUENCY - TRANSITION:  10MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJD5731T4G

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER - MAX:  1.56W

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  DPAK-3

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  1V @ 200MA, 1A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  350V