CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  4A

CURRENT - COLLECTOR CUTOFF (MAX):  10ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  10 @ 2A, 5V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 350V 4A 30MHZ 2W THROUGH HOLE TO-220AB

FREQUENCY - TRANSITION:  30MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJE15035G

MANUFACTURER STANDARD LEAD TIME:  31 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  TUBE

POWER - MAX:  2W

SUPPLIER DEVICE PACKAGE:  TO-220AB

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  500MV @ 100MA, 1A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  350V