CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  4A

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  40 @ 200MA, 1V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 100V 4A 40MHZ 1.5W THROUGH HOLE TO-225AA

FREQUENCY - TRANSITION:  40MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJE253G

MANUFACTURER STANDARD LEAD TIME:  9 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-225AA, TO-126-3

PACKAGING:  BULK PACK

POWER - MAX:  1.5W

SUPPLIER DEVICE PACKAGE:  TO-225AA

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  600MV @ 100MA, 1A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  100V