BASE PART NUMBER:  MJE350

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  500MA

CURRENT - COLLECTOR CUTOFF (MAX):  100ΜA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  30 @ 50MA, 10V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 300V 500MA 20W THROUGH HOLE TO-225AA

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MJE350G

MANUFACTURER STANDARD LEAD TIME:  9 WEEKS

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-225AA, TO-126-3

PACKAGING:  BULK PACK

POWER - MAX:  20W

SUPPLIER DEVICE PACKAGE:  TO-225AA

TRANSISTOR TYPE:  PNP

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  300V