BASE PART NUMBER:  MMBT5089

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  50MA

CURRENT - COLLECTOR CUTOFF (MAX):  50NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  400 @ 100ΜA, 5V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN 25V 50MA 50MHZ 300MW SURFACE MOUNT SOT-23-3 (TO-236)

FREQUENCY - TRANSITION:  50MHZ

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MMBT5089LT1G

MANUFACTURER STANDARD LEAD TIME:  36 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  300MW

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TRANSISTOR TYPE:  NPN

VCE SATURATION (MAX) @ IB, IC:  500MV @ 1MA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  25V

ALTERNATE PARTS:  SMMBT5089LT1G