BASE PART NUMBER:  MMBTA13

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  300MA

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  10000 @ 100MA, 5V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR NPN - DARLINGTON 30V 300MA 125MHZ 225MW SURFACE MOUNT SOT-23-3 (TO-236)

FREQUENCY - TRANSITION:  125MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MMBTA13LT1G

MANUFACTURER STANDARD LEAD TIME:  36 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  225MW

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TRANSISTOR TYPE:  NPN - DARLINGTON

VCE SATURATION (MAX) @ IB, IC:  1.5V @ 100ΜA, 100MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  30V

ALTERNATE PARTS:  SMMBTA13LT1G MMBTA13LT3G MMBTA13LT3G