CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  300MA (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  3.2NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  65PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MMFT960T1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -65°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  800MW (TA)

RDS ON (MAX) @ ID, VGS:  1.7 OHM @ 1A, 10V

STANDARD PACKAGE:  1

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  3.5V @ 1MA