BASE PART NUMBER:  MUN52**DW1T

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  35 @ 5MA, 10V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 2 NPN - PRE-BIASED (DUAL) 50V 100MA 250MW SURFACE MOUNT SC-88/SC70-6/SOT-363

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  MUN5211DW1T1G

MANUFACTURER STANDARD LEAD TIME:  40 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  6-TSSOP, SC-88, SOT-363

PACKAGING:  REEL

POWER - MAX:  250MW

RESISTOR - BASE (R1):  10 KOHMS

RESISTOR - EMITTER BASE (R2):  10 KOHMS

SUPPLIER DEVICE PACKAGE:  SC-88/SC70-6/SOT-363

TRANSISTOR TYPE:  2 NPN - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  250MV @ 300ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V