CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  2.6A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 59V 2.6A (TA) 1.69W (TA) SURFACE MOUNT SOT-223

DRAIN TO SOURCE VOLTAGE (VDSS):  59V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  3.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  4.5NC @ 4.5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  155PF @ 35V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NCV8440ASTT1G

MANUFACTURER STANDARD LEAD TIME:  13 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.69W (TA)

RDS ON (MAX) @ ID, VGS:  110 MOHM @ 2.6A, 10V

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  SOT-223

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±15V

VGS(TH) (MAX) @ ID:  1.9V @ 100ΜA

ALTERNATE PARTS:  NCV8440ASTT3G