CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  100A (TA)

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

EXPANDED DESCRIPTION:  N-CHANNEL 100V 100A (TA) 110W (TC) SURFACE MOUNT D²PAK (TO-263)

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  35NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2950PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NDBA100N10BT4H

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  175°C (TJ)

PACKAGE / CASE:  TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB

PACKAGING:  REEL

POWER DISSIPATION (MAX):  110W (TC)

RDS ON (MAX) @ ID, VGS:  6.9 MOHM @ 50A, 15V

STANDARD PACKAGE:  800

SUPPLIER DEVICE PACKAGE:  D²PAK (TO-263)

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 1MA