CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  4.1A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  10V

EXPANDED DESCRIPTION:  N-CHANNEL 600V 4.1A (TC) 83W (TC) THROUGH HOLE I-PAK

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  29NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  640PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NDD04N60Z-1G

MANUFACTURER STANDARD LEAD TIME:  19 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  TUBE

POWER DISSIPATION (MAX):  83W (TC)

RDS ON (MAX) @ ID, VGS:  2 OHM @ 2A, 10V

STANDARD PACKAGE:  75

SUPPLIER DEVICE PACKAGE:  I-PAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±30V

VGS(TH) (MAX) @ ID:  4.5V @ 50ΜA