CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  11A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

EXPANDED DESCRIPTION:  N-CHANNEL 600V 11A (TC) 114W (TC) SURFACE MOUNT DPAK-3

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  26NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  790PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NDD60N360U1T4G

MANUFACTURER STANDARD LEAD TIME:  17 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  114W (TC)

RDS ON (MAX) @ ID, VGS:  360 MOHM @ 5.5A, 10V

STANDARD PACKAGE:  2,500

SUPPLIER DEVICE PACKAGE:  DPAK-3

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA