CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  8.2A (TC)

DRAIN TO SOURCE VOLTAGE (VDSS):  600V

FET FEATURE:  STANDARD

FET TYPE:  MOSFET N-CHANNEL, METAL OXIDE

FAMILY:  FETS - SINGLE

GATE CHARGE (QG) @ VGS:  18NC @ 10V

INPUT CAPACITANCE (CISS) @ VDS:  540PF @ 50V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NDD60N550U1-1G

MANUFACTURER STANDARD LEAD TIME:  23 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  3 (168 HOURS)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-251-3 SHORT LEADS, IPAK, TO-251AA

PACKAGING:  TUBE

POWER - MAX:  94W

RDS ON (MAX) @ ID, VGS:  550 MOHM @ 4A, 10V

STANDARD PACKAGE:  75

SUPPLIER DEVICE PACKAGE:  IPAK (TO-251)

VGS(TH) (MAX) @ ID:  4V @ 250ΜA