CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 5MA, 10V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 500MW SURFACE MOUNT SOT-563

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NSBC123JPDXV6T5G

MANUFACTURER STANDARD LEAD TIME:  14 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  500MW

RESISTOR - BASE (R1):  2.2 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

STANDARD PACKAGE:  8,000

SUPPLIER DEVICE PACKAGE:  SOT-563

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  250MV @ 300ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

ALTERNATE PARTS:  NSBC123JPDXV6T1G