CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  1A

CURRENT - COLLECTOR CUTOFF (MAX):  100NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 500MA, 2V

EXPANDED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 30V 1A 100MHZ 310MW SURFACE MOUNT SOT-23-3 (TO-236)

FREQUENCY - TRANSITION:  100MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NSS30100LT1G

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  310MW

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  650MV @ 200MA, 2A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  30V

ALTERNATE PARTS:  MMBT589LT1G NSVMMBT589LT1G