CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  6A

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  120 @ 1A, 2V

DETAILED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 60V 6A 100MHZ 800MW SURFACE MOUNT SOT-223

FREQUENCY - TRANSITION:  100MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NSS60600MZ4T1G

MANUFACTURER STANDARD LEAD TIME:  40 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER - MAX:  800MW

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  SOT-223

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  350MV @ 600MA, 6A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  60V

ALTERNATE PARTS:  NSV60600MZ4T1G DSS60600MZ4-13 NSS60600MZ4T3G