CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  150MA

CURRENT - COLLECTOR CUTOFF (MAX):  500NA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  80 @ 5MA, 10V / 120 @ 5MA, 10V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN PRE-BIASED, 1 PNP 50V 150MA 140MHZ 250MW SURFACE MOUNT SC-88/SC70-6/SOT-363

FREQUENCY - TRANSITION:  140MHZ

LEAD FREE STATUS / ROHS STATUS:  CONTAINS LEAD / ROHS NON-COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NSTB60BDW1T1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  6-TSSOP, SC-88, SOT-363

PACKAGING:  REEL

POWER - MAX:  250MW

RESISTOR - BASE (R1):  22 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SC-88/SC70-6/SOT-363

TRANSISTOR TYPE:  1 NPN PRE-BIASED, 1 PNP

VCE SATURATION (MAX) @ IB, IC:  250MV @ 5MA, 10MA / 500MV @ 5MA, 50MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V