CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  2A

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  150 @ 500MA, 2V

EXPANDED DESCRIPTION:  BIPOLAR (BJT) TRANSISTOR PNP 60V 2A 100MHZ 460MW SURFACE MOUNT SOT-23-3 (TO-236)

FREQUENCY - TRANSITION:  100MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NSV60200LT1G

MANUFACTURER STANDARD LEAD TIME:  7 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  460MW

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  SOT-23-3 (TO-236)

TRANSISTOR TYPE:  PNP

VCE SATURATION (MAX) @ IB, IC:  220MV @ 200MA, 2A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  60V

ALTERNATE PARTS:  NSS60200LT1G