CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  18A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 18A (TA) 2.1W (TA), 55W (TJ) SURFACE MOUNT DPAK

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  5V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  22NC @ 5V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  675PF @ 25V

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NTD18N06LT4G

MANUFACTURER STANDARD LEAD TIME:  18 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-252-3, DPAK (2 LEADS + TAB), SC-63

PACKAGING:  REEL

POWER DISSIPATION (MAX):  2.1W (TA), 55W (TJ)

RDS ON (MAX) @ ID, VGS:  65 MOHM @ 9A, 5V

SUPPLIER DEVICE PACKAGE:  DPAK

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±15V

VGS(TH) (MAX) @ ID:  2V @ 250ΜA